Victor Veliadis

PowerAmerica and NC State University

Fundamentals of SiC planar and trench MOSFETs

Abstract:
Abstract: Having been commercially introduced in 2011, SiC MOSFETs have gone through several generations of improvements and are currently offered in planar and trench configurations by major semiconductor chip manufacturers. This presentation will provide an overview of  planar/trench MOSFET design and fabrication aspects, highlighting key competitive advantages.

Short-bio:
Dr. Victor Veliadis is Executive Director and CTO of PowerAmerica, a Manufacturing USA Institute accelerating SiC and GaN power semiconductor chip and electronics commercialization. At PowerAmerica, he has managed over $150 million across 200+ projects advancing manufacturing and workforce development, and is currently managing a $64M DOE renewal. Prior to joining Power America in 2016, Dr. Veliadis spent 21 years post-Ph.D. in the semiconductor industry, where his work included design, fabrication, and testing of SiC devices, GaN devices for radar systems, and financial and operations management of a commercial semiconductor fab. He is an NC State professor, an IEEE and NAI Fellow, and holds 27 U.S. patents, 173 publications, 13 book chapters, and one co-edited book. He has delivered over 250 keynotes and invited presentations.