Rita Rooyackers
ClaRoo, Leuven, Belgium
Going from SOI- to Bulk-FinFETs and their natural extensions Nanowires and Nanosheets
FinFET based Multi-Gate (MuGFET) devices have been widely studied and have shown to be one of the most promising technology solutions that has the potential to meet the requirements for scaling CMOS into the 14nm technology node and beyond. The achieved enhanced channel conduction is due to contributions from both top and sidewalls of the fin. Therefore the effective width of a triple gate MuGFET is given by WEFF = n(WFIN + 2HFIN) , where n, WFIN and HFIN are the number, width and height of the fins, respectively. The ultimate current driving capability of the technology is determined by the minimum usable spacing (S2) between two adjacent fins.
In this talk we will address a number of integration challenges like the importance of the control of the fin dimensions making a difference between the Critical Dimension (CD-control), the Line Edge Roughness (LER) and Line Width Roughness (LWR). In addition, the importance of the Fin dimension control to transform fin-structures to nanowires enabling the integration of gate all around devices improving the electrostatic channel control will be shown. The application of strain as a mobility booster will be briefly demonstrated as well as the formation of stacked nanowires or nanosheets enabling the integration of High and Low Power devices in a CMOS flow
Rita Rooyackers received in 1975 the B.S. degree in industrial chemistry from the Rega Institute, Katholieke Universiteit Leuven (KU Leuven), Belgium, and followed the basics of VLSI processing of the postgraduate education program in Microelectronics Engineering at the KU Leuven. From 1976 until 1984, she was working at the ESAT laboratory of the KU Leuven. In 1984, she joined the research center imec in Leuven, working in the field on deep sub-micron CMOS technology and exploratory devices. She has participated in several European projects and the imec core partner program. She holds more than 30 European and American patents and has authored and co-authored more than 300 papers.