Adelmo Ortiz Conde
Simón Bolívar University, Caracas, Venezuela
On the Series Resistance in Vertical Transport Nanowire Field Effect Transistors (VTFETs)
The classical planar MOSFETs were replaced with 3D FinFETs in 2012, and with gate-all-around (GAA) Nanosheet FETs in 2025. The GAA nanosheet FETs used in the industry are composed of nanosheets stacked vertically, with the current flowing horizontally. In research labs, new vertical GAA FETs are being developed; these are composed of nanosheets stacked horizontally, with the current flowing vertically. The performance of modern MOSFETs is limited by the presence of parasitic series resistances and mobility degradation. The asymmetry between drain and source resistance is crucial for the particular case of Vertical Transport Nanowire Field Effect Transistors. This presentation reviews and scrutinizes the extraction methods currently used to determine the values of parasitic series resistances and mobility degradation from the measured drain current.
Adelmo Ortiz-Conde received the professional Electronics Engineer degree from Universidad Simón Bolívar (USB), Caracas, Venezuela, in 1979 and the M.E. and Ph.D. from the University of Florida, Gainesville, in 1982 and 1985, respectively.
From 1979 to 1980, he served as an instructor in the Electronics Department at USB. In 1985, he joined the technical Staff of Bell Laboratories, Reading, PA, where he was engaged in the development of high voltage integrated circuits. In 1987, he returned to the Electronics Department at USB where he was promoted to Full Professor in 1995. He was on sabbatical leave at University of Central Florida (UCF), Orlando, from January to August 1994, and again from July to December 1998. He also was on sabbatical leave at “Centro de Investigaciones y Estudios Avanzados” (CINVESTAV) National Polytechnic Institute (IPN), Mexico City, Mexico, from October 2000 to February 2001. He has coauthored one textbook, Analysis and Design of MOSFETs: Modeling, Simulation and Parameter Extraction (2012 Springer reprint of the original 1st ed. 1998, http://dx.doi.org/10.1007/978-1-4615-5415-8 ), over 200 international technical journal and conference articles (including 22 invited review articles). His present research interests include the modeling and parameter extraction of semiconductor devices. Dr. Ortiz-Conde is an EDS Distinguished Lecturer and the Vice-Chair of IEEE’s CAS/ED Venezuelan Chapter. He was editor of IEEE Electron Device Letters in the area of Silicon Devices and Technology from 2009 to 2018. He was the Region 9 Editor of IEEE EDS Newsletter from 2000 to 2005. He is a Member of the Editorial Advisory Board of various technical journals: Microelectronics and Reliability, “Universidad Ciencia y Tecnología” and “Revista Ingeniería UC”. He regularly serves as reviewer of several international journals and conferences. He was one of the founders of the first IEEE International Caracas Conference on Devices, Circuits, and Systems (ICCDCS) in 1995. In order to make it more international, this conference changed its name to “International Caribbean Conference on Devices, Circuits, and Systems (ICCDCS)” in its sixth edition in 2006. Since 2019, this conference has been sponsored by the IEEE Electron Devices Society (EDS) under the name of “IEEE Latin America Electron Devices Conference (LAEDC)”.